document number: 94018 for technical questions within your region, please contact one of the following: www.vishay.com revision: 04-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 30 a fred pt ? vs-30eph06pbf vishay semiconductors features ? hyperfast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? single diode device ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level description/applications state of the art hyperfast reco very rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. the planar structure and th e platinum do ped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended fo r use in pfc boost stage in the ac/dc section of smps, inverters or as freewheeling diodes. their extremely optimized stor ed charge and low recovery current minimize the switching losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-247ac modified (2 pins) i f(av) 30 a v r 600 v v f at i f 2.6 v t rr typ. see recovery table t j max. 175 c diode variation single die base common cathode 2 13 cathode anode to-247ac modified absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 116 c 30 a non-repetitive peak surge current i fsm t j = 25 c 300 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 30 a - 2.0 2.6 i f = 30 a, t j = 150 c - 1.34 1.75 reverse leakage current i r v r = v r rated - 0.3 50 a t j = 150 c, v r = v r rated - 60 500 junction capacitance c t v r = 600 v - 33 - pf series inductance l s measured lead to lead 5 mm from package body - 3.5 - nh
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94018 2 diodesamericas@vishay.com , diodesasia@vishay.com , revision: 04-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-30eph06pbf vishay semiconductors hyperfast rectifier, 30 a fred pt ? dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 50 a/s, v r = 30 v - 28 35 ns t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v -31- t j = 125 c - 77 - peak recovery current i rrm t j = 25 c - 3.5 - a t j = 125 c - 7.7 - reverse recovery charge q rr t j = 25 c - 65 - nc t j = 125 c - 345 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc -0.50.9 c/w thermal resistance, junction to am bient per leg r thja typical socket mount - - 70 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.4- weight -6.0- g -0.22- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247ac modified 30eph06
document number: 94018 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-30eph06pbf hyperfast rectifier, 30 a fred pt ? vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 t j = 175 c t j = 150 c t j = 25 c 1000 0 3.5 1.5 1 2.5 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.5 2 3 0.01 0.1 1 10 100 0 200 400 v r - reverse voltage (v) i r - reverse current (a) 300 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 100 0.001 1000 600 500 0.0001 100 1000 0 200 400 500 600 10 v r - reverse voltage (v) c t - junction capacitance (pf) 300 100 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 10 0.001
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94018 4 diodesamericas@vishay.com , diodesasia@vishay.com , revision: 04-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-30eph06pbf vishay semiconductors hyperfast rectifier, 30 a fred pt ? fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0 5 10 15 20 25 allowable case temperature (c) i f(av) - average forward current (a) 140 160 180 see note (1) 120 dc 100 80 30 35 40 45 square wave (d = 0.50) rated v r applied 0 1020304045 average power loss (w) i f(av) - average forward current (a) 0 10 30 40 50 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 20 rms limit 5 152535 60 70 80 90 0 i f = 30 a i f = 15 a 10 100 1000 t rr (ns) di f /dt (a/s) 40 60 80 90 30 50 70 v r = 200 v t j = 125 c t j = 25 c 0 20 100 1000 q rr (nc) di f /dt (a/s) 600 1000 1200 400 800 v r = 200 v t j = 125 c t j = 25 c 0 200 i f = 30 a i f = 15 a
document number: 94018 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-30eph06pbf hyperfast rectifier, 30 a fred pt ? vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94018 6 diodesamericas@vishay.com , diodesasia@vishay.com , revision: 04-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-30eph06pbf vishay semiconductors hyperfast rectifier, 30 a fred pt ? ordering information table links to related documents dimensions www.vishay.com/doc?95253 part marking information www.vishay.com/doc?95255 2 - current rating (30 = 30 a) 3 - circuit configuration: e = single diode 4 - package: p = to-247ac modified 5 - h = hyperfast recovery 6 - voltage rating (06 = 600 v) tube standard pack quantity: 25 pieces device code 5 1 3 2 4 6 7 vs- 30 e p h 06 pbf 7 - pbf = lead (pb)-free 1 - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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